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Le Journal de Physique Colloques

Vol. 43 No. C5 (Décembre 1982)

Colloque International sur l'Epitaxie des Semiconducteurs / Epitaxial Growth of Semiconductor Material

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• THE EFFECT OF ARSENIC SPECIES ON THE MINORITY CARRIER PROPERTIES OF (AlGa)As-GaAs DOUBLE HETEROSTRUCTURES GROWN BY MBE     p. C5-129
  G. Duggan, P. Dawson, C.T. Foxon and G.W. 't Hooft
  Abstract | PDF file (210.6 KB)



• LIQUID PHASE EPITAXIAL GROWTH OF In_xGa_1-xAs/ InP NEAR SOLID INSTABILITY     p. C5-3
  M.C. Joncour, J.L. Benchimol, J. Burgeat and M. Quillec
  Abstract | PDF file (248.4 KB)



• INTERFACE SPINODAL DECOMPOSITION IN LPE In_xGa_1-xAs_yP_1-y LATTICE MATCHED TO InP     p. C5-11
  F. Glas, M.M.J. Treacy, M. Quillec and H. Launois
  Abstract | PDF file (1.179 MB)



• THERMODYNAMIC ASPECTS OF ORGANOMETALLIC VPE     p. C5-17
  G.B. Stringfellow
  Abstract | PDF file (22.39 KB)



• INSTABILITY CRITERIA IN TERNARY AND QUATERNARY I I I-V EPITAXIAL SOLID SOLUTIONS     p. C5-19
  B. de Cremoux
  Abstract | PDF file (371.1 KB)



• LOW-TEMPERATURE GROWTH CONDITIONS AND PROPERTIES OF AlGa (As) Sb ON GaSb SUBSTRATE BY LPE     p. C5-29
  S. Fujita, N. Hamaguchi, Y. Takeda and A. Sasaki
  Abstract | PDF file (1.501 MB)



• THE EFFECT OF Ge ON THE LIQUIDUS AND SOLIDUS IN THE SYSTEM AlGaAs : Ge     p. C5-39
  D. Dutartre, M. Gavand, L. Mayet, A. Laugier and I. Ansara
  Abstract | PDF file (273.2 KB)



• LE MODELE "D. L. P. - ORDRE-CONTRAINTE" : INFLUENCE DU DESORDRE CHIMIQUE ET DU SUBSTRAT D'EPITAXIE SUR LES DIAGRAMMES D'EQUILIBRE TERNAIRES & QUATERNAIRES I I I-V     p. C5-47
  A. Marbeuf and J.C. Guillaume
  Abstract | PDF file (904.6 KB)



• LPE-GROWTH OF HIGH PURITY Ga_0.47In_0.53As^- AND Ga_0.31In_0.69As_0.69P_0.31^- LAYERS LATTICE MATCHED TO InP     p. C5-61
  R. Linnebach, K. Hess, K. Lösch and G. Schemmel
  Abstract | PDF file (1.393 MB)



• SELF-SUPERSATURATION IN LIQUID PHASE EPITAXY OF InGaAs ON InP : A SIMPLIFIED L.P.E. TECHNIQUE     p. C5-69
  J.L. Benchimol and M. Quillec
  Abstract | PDF file (181.6 KB)



• LPE GROWTH AND CHARACTERIZATION OF CADMIUM AND BERYLLIUM DOPED InP AND In_.7Ga_.3As_.6P_.4     p. C5-73
  A. Perronnet, J. Magnabal, D. Sigogne, D. Huet and J. Benoit
  Abstract | PDF file (604.7 KB)



• THE USE OF LOW PRESSURE IN THE EPITAXIAL GROWTH OF Si, GaAs, GaAlAs, InP, GaInAs, GaInAsP AND InAlAs     p. C5-87
  J.P. Duchemin
  Abstract | PDF file (215.9 KB)



• KINETIC THEORY OF AUTODOPING IN REDUCED PRESSURE EPITAXY OF SILICON     p. C5-93
  M. Onuki and A. Nishikawa
  Abstract | PDF file (315.8 KB)



• DOPANT INCORPORATION DURING LP-VPE OF GaAs     p. C5-101
  E. Veuhoff, A. Sauerbrey, N. Pütz, M. Heyen and P. Balk
  Abstract | PDF file (362.4 KB)



• LOW PRESSURE VAPOUR PHASE EPITAXY OF GaAs -THE GROWTH RATE LIMITING PROCESSES     p. C5-111
  J.L. Gentner and R. Cadoret
  Abstract | PDF file (272.1 KB)



• THE OMVPE GROWTH OF GaAs AND GaAlAs ON A LARGE SCALE     p. C5-119
  S.D. Hersee, M. Baldy, P. Assenat, D. Hyghe, M. Bonnet and J.P. Duchemin
  Abstract | PDF file (535.9 KB)



• INFLUENCE OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL PROPERTIES OF MBE GROWN GaAs     p. C5-135
  H. Jung, H. Künzel and K. Ploog
  Abstract | PDF file (441.2 KB)



• THE INTERACTION OF HYDROGEN WITH GaAs SURFACES     p. C5-145
  R.Z. Bachrach and R.D. Bringans
  Abstract | PDF file (363.0 KB)



• SILICON MOLECULAR BEAM EPITAXY : A COMPREHENSIVE BIBLIOGRAPHY 1962-82     p. C5-153
  J.C. Bean and S.R. McAfee
  Abstract | PDF file (681.7 KB)



• SILICON MODULATION DOPING STRUCTURES USING MULTI-STEP MOLECULAR BEAM EPITAXY AND ION IMPLANTATION     p. C5-173
  T. de Jong, W.A.S. Douma and F.W. Saris
  Abstract | PDF file (30.13 KB)



• INFLUENCE OF GROWTH CONDITIONS AND OF ALLOY COMPOSITION ON ELECTRICAL AND OPTICAL PROPERTIES OF MBE Al_xGa_1-xAs (0.2 = x = 0.4)     p. C5-175
  H. Künzel, H. Jung, E. Schubert and K. Ploog
  Abstract | PDF file (400.9 KB)



• QUANTUM WELL AND MODULATION DOPED GaAs - Ga_l-xAl_xAs HETEROSTRUCTURES     p. C5-185
  P.M. Frijlink and J. Maluenda
  Abstract | PDF file (986.6 KB)



• THE GROWTH OF QUANTUM WELL GaAs/GaAlAs LASER STRUCTURES     p. C5-193
  S.D. Hersee, M. Baldy and P. Assenat
  Abstract | PDF file (254.9 KB)



• PREPARATION AND CHARACTERIZATION OF STRAINED SUPERLATTICES STRUCTURES OF InGaAs/GaAs BY MBE     p. C5-201
  L. Goldstein, M. Quillec, K. Rao, P. Hénoc, J.M. Masson and J.Y. Marzin
  Abstract | PDF file (854.7 KB)



• INFLUENCE OF MBE GROWTH CONDITIONS ON THE PROPERTIES OF Al_xGa_1-xAs/GaAs HETEROSTRUCTURES     p. C5-209
  H. Morkoç
  Abstract | PDF file (2.024 MB)



• THE VAPOR PHASE INTERACTION OF TRIMETHYLALUMINUM WITH GRAPHITE DURING OMVPE     p. C5-221
  D.W. Kisker, D.A. Stevenson, J.N. Miller and G.B. Stringfellow
  Abstract | PDF file (631.7 KB)



• INFLUENCE OF GRAPHITE BAFFLES IN GaAs/Ga AlAs OM-VPE GROWTH     p. C5-229
  R. Azoulay, L. Dugrand and E.V.K. Kao
  Abstract | PDF file (1.886 MB)



• TEMPERATURES AND FLOWS IN HORIZONTAL EPI REACTORS     p. C5-235
  L.J. Giling
  Abstract | PDF file (1.974 MB)



• THE DESIGN AND OPTIMISATION OF A LARGE SCALE VPE REACTOR FOR THE GROWTH OF GaAs BY THE HALIDE PROCESS     p. C5-249
  I.H. Goodridge
  Abstract | PDF file (2.023 MB)



• MULTICHAMBER REACTORS : A SOLUTION TO THE PROBLEM OF GRADED HETEROINTERFACES IN HOT-WALL VPE SYSTEMS     p. C5-259
  G. Beuchet, D. Clemensat and P. Thebault
  Abstract | PDF file (1.053 MB)



• ANISOTROPY IN SULPHUR DOPING OF GaAs GROWN BY V.P.E.     p. C5-267
  J.L. Gentner
  Abstract | PDF file (208.9 KB)



• Al_xGa_1-xAs/Al_yGa_1-yAs VISIBLE LASERS GROWN BY MOCVD     p. C5-271
  Y. Mori, O. Matsuda, M. Ikeda, K. Kaneko and N. Watanabe
  Abstract | PDF file (356.7 KB)



• H₂Se DOPING OF MOCVD GROWN GaAs AND GaAlAs     p. C5-281
  R.W. Glew
  Abstract | PDF file (244.9 KB)



• THE VAPOUR PHASE ETCHING AND N-TYPE DOPING OF INDIUM PHOSPHIDE     p. C5-287
  P. Davies, N.B. Hasdell and P.L. Giles
  Abstract | PDF file (3.569 MB)



• GaAs METAL ORGANICS VAPOUR PHASE EPITAXY : RESIDUAL CARBON     p. C5-303
  B. el Jani, M. Leroux, J.C. Grenet and P. Gibart
  Abstract | PDF file (224.6 KB)



• SELECTIVE ETCHING OF n-TYPE GaAs IN A CrO₃-HF-H₂O SYSTEM UNDER LASER ILLUMINATION     p. C5-313
  J.L. Weyher and J. Van de Ven
  Abstract | PDF file (1.539 MB)



• GROWTH OF PLANAR DOPED BARRIER STRUCTURES IN GALLIUM ARSENIDE BY MOLECULAR BEAM EPITAXY     p. C5-321
  S.C. Palmateer, P.A. Maki, M.A. Hollis, L.F. Eastman, I.D. Ward and C. Evans
  Abstract | PDF file (65.81 KB)



• ORGANOMETALLIC EPITAXIAL GROWTH OF GaAs_1-xP_x     p. C5-323
  L. Samuelson, P. Omling, H. Titze and H.G. Grimmeiss
  Abstract | PDF file (1.135 MB)



• PARAMETRIC STUDIES OF GaAs GROWTH BY METALORGANIC MOLECULAR BEAM EPITAXY     p. C5-339
  N. Vodjdani, A. Lemarchand and H. Paradan
  Abstract | PDF file (1.382 MB)



• DEEP STATES AND SURFACE PROCESSES IN GaAs GROWN BY MOLECULAR BEAM EPITAXY     p. C5-351
  P. Blood, J.J. Harris, B.A. Joyce and J.H. Neave
  Abstract | PDF file (232.8 KB)



• THERMODYNAMIC STUDIES OF THE SILICON TRANSPORT IN LPE GROWTH ON InP SUBSTRATES     p. C5-357
  C. Chatillon and C. Bernard
  Abstract | PDF file (590.4 KB)



• OPTIMISATION OF Sn DOPING IN GaAls/ GaAs DH LASERS GROWN BY MBE     p. C5-377
  J.F. Stagg, P.J. Hulyer, C.T. Foxon and D. Ashenford
  Abstract | PDF file (205.2 KB)



• LOW TEMPERATURE PHOTOLUMINESCENCE AND ABSORPTION OF Ga_xIn_1-xAs/ InP     p. C5-383
  K.H. Goetz, A.V. Solomonov, D. Bimberg, H. Jürgensen, M. Razeghi and J. Selders
  Abstract | PDF file (472.2 KB)



• GROWTH OF InP-EPITAXIAL LAYERS : A COMPARISON BETWEEN MOVPE- AND VPE-TECHNIQUES     p. C5-393
  K.W. Benz, H. Haspeklo and R. Bosch
  Abstract | PDF file (925.3 KB)



• EFFECTS OF GROWTH CONDITIONS ON DEEP-LEVEL DEFECTS IN VPE AND LPE GaAs     p. C5-401
  Sheng S. and W.L. Wang
  Abstract | PDF file (77.49 KB)



• GROWTH OF IV-VI, II-VI AND III-V SEMICONDUCTOR COMPOUNDS BY HOT WALL EPITAXY     p. C5-405
  J. Humenberger, M. Sadeghi, E. Gruber, G. Elsinger, H. Sitter and A. Lopez-Otero
  Abstract | PDF file (863.9 KB)



• PULSED ELECTRON BEAM ANNEALING OF ARSENIC-IMPLANTATION DAMAGE IN SILICON     p. C5-411
  D. Barbier, A. Laugier and A. Cachard
  Abstract | PDF file (375.4 KB)



• CROISSANCE EPITAXIQUE D'ARSENIURE DE GALLIUM PAR DEPOT CHIMIQUE EN PHASE VAPEUR A PARTIR D'UN NOUVEAU COMPOSE ORGANOMETALLIQUE LE MONOCHLORODIMETHYLGALLIUM-TRIETHYLARSINE     p. C5-421
  A. Zaouk and G. Constant
  Abstract | PDF file (1.902 MB)



• PROPERTIES OF EPITAXIAL Si FILMS GROWN ON YTTRIA-STABILIZED CUBIC ZIRCONIA SUBSTRATES BY CHEMICAL VAPOR DEPOSITI ON     p. C5-427
  I. Golecki, H.M. Manasevit, J.J. Yang, L.A. Moudy, J.E. Mee and T.J. Magee
  Abstract | PDF file (34.89 KB)



• INFLUENCE DE LA TEMPERATURE D'EPITAXIE SUR LA QUALITE CRISTALLINE, LES PERFORMANCES ELECTRIQUES ET LE TYPE DE CONDUCTION DES COUCHES DE Cd_xHg_1-xTe PREPAREES EN EPITAXIE PAR JETS MOLECULAIRES     p. C5-429
  A. Million and J.P. Faurie
  Abstract | PDF file (134.1 KB)



• OBSERVATIONS ON THE GROWTH OF GOOD SURFACE QUALITY, HIGH MOBILITY EPITAXIAL LAYERS OF InP BY THE In-PCl₃-H₂ TECHNIQUE     p. C5-433
  D.J. Ashen, D.A. Anderson, N. Apsley, M.T. Emeny and L.L. Taylor
  Abstract | PDF file (1003 KB)



• MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF In_0.53Ga_0.47As AND InP SUBSTRATE     p. C5-445
  D. Bonnevie and D. Huet
  Abstract | PDF file (311.0 KB)



• EPITAXIE EN PHASE LIQUIDE DE DOUBLES HETEROSTRUCTURES LASER In^1-xGa^xAs^yP^1-y/InP (x ≈ 0,5y, y ≈ 0,9) EMETTANT AU VOISINAGE DE 1,55µm ET CARACTERISEES PAR UNE FAIBLE DENSITE DE COURANT DE SEUIL     p. C5-453
  J.P. Jicquel, A. Perronnet, H. Lebled, M. Matabon and J. Benoit
  Abstract | PDF file (32.79 KB)



• PROBLEMES LIES A LA REALISATION PAR EPITAXIE EN PHASE LIQUIDE DE LASERS A RUBAN ENTERRE In_1-xGa_xAs_yP_1-y (λ = 1,3 µm et 1,5 µm) DE FAIBLE LARGEUR (1 à 3 µm)     p. C5-455
  R. Landreaux, O. Boulard, J.P. Jicquel, H. Lebled, L. Legouezigou, Y. Louis, J. Magnabal, D. Sigogne and J. Benoit
  Abstract | PDF file (39.40 KB)



• VAPOUR PHASE GROWTH OF GaAs BY THE HYDRIDE TECHNIQUE     p. C5-457
  I.A. Dorrity
  Abstract | PDF file (491.6 KB)



• INFLUENCE DU PROCESSUS D'ELABORATION SUR LES DEFAUTS CRISTALLOGRAPHIQUES DANS LES COUCHES DE GaAs EPITAXIEES PAR JETS MOLECULAIRES     p. C5-465
  M. Bafleur and A. Munoz-Yague
  Abstract | PDF file (2.841 MB)



• ELABORATION DE COUCHES EPITAXIEES DE SILICIUM PAR PULVERISATION IONIQUE     p. C5-473
  C. Schwebel, F. Meyer and G. Gautherin
  Abstract | PDF file (581.7 KB)



• GROWTH AND PROPERTIES OF 1,3 AND 1.5µm GaInAsP DOUBLE HETEROSTRUCTURE WITH DIFFERENT ACTIVE LAYER THICKNESSES     p. C5-481
  G. Chaminant, M. Gilleron, J. Charil, P. Devoldere and J.C. Bouley
  Abstract | PDF file (33.13 KB)



• PROBLEM RELATED TO THE MBE GROWTH AT HIGH SUBSTRATE TEM0PERATURE FORGaAs-Ga_1-xAl_xAs DOUBLE HETEROSTRUCTURE LASERS     p. C5-483
  F. Alexandre, N. Duhamel, P. Ossart, J.M. Masson and C. Meillerat
  Abstract | PDF file (1.016 MB)



• A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V COMPOUNDS     p. C5-491
  A.K. Chatterjee, M.M. Faktor, R.H. Moss and E.A.D. White
  Abstract | PDF file (1.001 MB)

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