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J. Phys. Colloques Vol. 41 No. C4

Le Journal de Physique Colloques

Vol. 41 No. C4 (Mai 1980)

Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides



  • MECHANISMS OF LASER INDUCED CRYSTALLIZATION OF SEMICONDUCTORS     p. C4-1
    J. M. Poate
    Abstract | PDF file (913.4 KB)


  • DENSE-PLASMA DYNAMICS DURING PULSED LASER ANNEALING     p. C4-7
    Ellen J. Yoffa
    Abstract | PDF file (398.1 KB)


  • IMPORTANCE OF THE PLASMA TO PULSED LASER ANNEALING     p. C4-15
    J. A. Van Vechten
    Abstract | PDF file (662.8 KB)


  • NON-THERMAL LASER INDUCED ORDERING AND PLASMA LIFE TIME     p. C4-25
    R. Tsu and S.S. Jha
    Abstract | PDF file (351.5 KB)


  • HEATING OF CRYSTALLINE AND AMORPHOUS SILICON BY C-SWITCHED LASER RADIATION     p. C4-31
    J.R. Meyer, F.J. Bartoli and M.R. Kruer
    Abstract | PDF file (323.1 KB)


  • COMMENTS ON THE MECHANISMS OPERATING IN LASER ANNEALING     p. C4-37
    G. Vitali and M. Bertolotti
    PDF file (667.0 KB)


  • SOLUBILITY LIMIT OF DOPANTS IN SILICON IRRADIATED BY RUBY LASER     p. C4-41
    Fogarassy E., Stuck R., Grob J.J., Grob A. and Siffert P.
    Abstract | PDF file (246.0 KB)


  • CO2-LASER ANNEALING OF BURIED LAYERS PRODUCED BY MEV ION IMPLANTATION     p. C4-47
    H. Boroffka, E.F. Krimmel, H. Runge and R. Langfeld
    Abstract | PDF file (796.1 KB)


  • NUCLEATION THEORY AND DYMAMICS OF FIRST-ORDER PHASE TRANSITIONS NEAR A CRITICAL POINT     p. C4-51
    K. Binder
    Abstract | PDF file (1.976 MB)


  • LASER INDUCED OSCILLATORY PHENOMENA IN AMORPHOUS GeSe2 FILMS     p. C4-63
    J. Hajtó
    Abstract | PDF file (2.709 MB)


  • LASER ANNEALING OF ELEMENTAL AND COMPOUND SEMICONDUCTOR FILMS     p. C4-71
    R. Andrew, L. Baufay, L.D. Laude, M. Lovato and M. Wautelet
    Abstract | PDF file (1.566 MB)


  • IS LASER-INDUCED NUCLEATION DUE TO A BULK LONG-WAVELENGTH INSTABILITY ?     p. C4-75
    Binder, K.
    Abstract | PDF file (199.2 KB)


  • CHANGES IN SURFACE TOPOGRAPHY AFTER PULSED LASER ANNEAL OF SILICON     p. C4-79
    C. Hill and D.J. Godfrey
    Abstract | PDF file (2.911 MB)


  • TIME DEPENDENCE OF THE NUCLEATION OF SLIP DISLOCATIONS DURING LASER ANNEALING OF SILICON     p. C4-85
    G.A. Rozgonyi and H. Baumgart
    Abstract | PDF file (2.067 MB)


  • SUBSTRATE ORIENTATION EFFECT ON THE REGROWTH OF AMORPHOUS SILICON BY LASER PULSES     p. C4-89
    D. Hoonhout, T. de Jong and F.W. Saris
    PDF file (122.7 KB)


  • NONEQUILIBRIUM SOLUBILITY AND SEGREGATION IN ION IMPLANTED, LASER ANNEALED SILICON     p. C4-91
    S.R. Wilson, C.W. White, F.W. Young, Jr., B.R. Appleton and J. Narayan
    Abstract | PDF file (1.081 MB)


  • LASER AND ELECTRON-BEAM INDUCED FORMATION OF METAL-SILICIDES     p. C4-97
    F. Nava, G. Majni, A. Luches, V. Nassisi and E. Janniti
    PDF file (167.4 KB)


  • CONCEPTS IN THE THEORY OF NONEQUILIBRIUM PHASE TRANSITIONS     p. C4-101
    G. Dewel, P. Borckmans and D. Walgraef
    Abstract | PDF file (424.2 KB)


  • COMMENTS ON THE MECHANISMS OF LASER ANNEALING     p. C4-109
    D. Turnbull
    PDF file (122.9 KB)


  • LASER INDUCED ORDERING AND DEFECTS IN ION-IMPLANTED HEXAGONAL SILICON CARBIDE     p. C4-111
    V.V. Makarov, T. Tuomi, K. Naukkarinen, M. Luomajärvi and M. Riihonen
    PDF file (1.085 MB)