Actes de la 7ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse / Proceedings of the Seventh European Conference on Chemical Vapour Deposition

J. Phys. Colloques 50 (1989) C5-757-C5-764
DOI: 10.1051/jphyscol:1989591

PREPARATION AND CHARACTERIZATION OF Ge-Si ALLOYS CARRIED OUT BY MOCVD

A. REYNES¹, C. DUFOR², P. MAZEROLLES² et R. MORANCHO<sup>1

1</sup>  Laboratoire de Cristallochimie Réactivité et Protection des Matériaux, CNRS UA-445, Institut National Polytechnique de Toulouse, Ecole Nationale Supérieure de Chimie de Toulouse, 118 Route de Narbonne, F-31077 Toulouse Cedex, France
²  Laboratoire des Organométalliques, CNRS UA-477, Université Paul Sabatier, 118 Route de Narbonne, F-31077 Toulouse Cedex, France.

Résumé
L'élaboration d'alliages Si-Ge par dépôt chimique en phase vapeur a été entreprise à partir de deux composés organométalliques de formule H³Si-(CH₂)₂-GeH₃ et H₃Si-(CH₂)₃-GeH₃. Le comportement thermique de ces composés est étudié par des analyses de la phase gazeuse de décomposition et du matériau solide. Les couches obtenues sont composées de silicium, de germanium e t ne contiennent pas de carbone. En fonction de ces résultats et de caractérisations physico-chimiques des précurseurs et du matériau une discussion nous amène à proposer une structure du matériau.

Abstract
The preparation of Ge-Si alloys by chemical vapour deposition has been undertaken using two organometallic compounds, H₃Si-(CH₂)₂-GeH₃ and H₃Si -(CH₂)₃-GeH₃. Their thermal behaviour was investigated by analysis of the gaseous products of decomposition and of the solid material. The thin coatings are composed of silicon , germanium and do not contain carbon. According to these results and physico-chemical characterizations of the precursors and the products, we are lead to propose a structure for the solid material.

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