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Issue J. Phys. Colloques
Volume 50, Number C5, Mai 1989
Actes de la 7ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse / Proceedings of the Seventh European Conference on Chemical Vapour Deposition
Page(s) C5-747 - C5-756
DOI http://dx.doi.org/10.1051/jphyscol:1989590

Actes de la 7ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse / Proceedings of the Seventh European Conference on Chemical Vapour Deposition

J. Phys. Colloques 50 (1989) C5-747-C5-756
DOI: 10.1051/jphyscol:1989590

MOLECULAR ENGINEERING IN SEMICONDUCTOR TECHNOLOGY : BOROSILICATEGLASS BY DECOMPOSITION OF A MONOMOLECULAR PRECURSOR

H. TREICHEL1, O. SPINDLER1 et Th. KRUCK2

1  Semiconductor Division Technology, Siemens AG, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
2  University of Cologne, Greinstr. 6, D-5000 Köln, F.R.G.


Résumé
Des verres borosilicatés (BSG) ont été déposés CVD sous basse pression à parois chaudes, et CVD assiblé par plasma à parlis de Tris(trimethylsiloxy)boron = TTMSB = B[OSi(CH3)3]3). Sous basse pression à 800 °C on obtient des verres à 4.7 % poids de bore. Par activation plasma il est possible de casser des liaisons détérminées dans la molécule initiale et de dêposer des films de haute qualité à 360 °C. Dans ce cas la teneur à bore peut varier de 0 à 5 % poids en changeant le paramêtres du procédé activé.


Abstract
Borosilicateglass (BSG) was deposited in a standard LPCVD-hotwall reactor and in a single-wafer PECVD-system using (Tris(trimethylsiloxy)boron = TTMSB = B[OSi(CH3)3]3) as source material. The LPCVD-deposition of BSG at 800 °C yields films of about 4.7 wt% boron. It is possible by means of plasma enhanced CVD to crack definite bondings in the precursor molecule and to deposite high quality BSG-films while reducing the deposition temperature down to 360 °C. A further advantage of the PECVD-process is that the boron content in the layers can be varyied in the range of 0 - 5 wt% by changing the process parameters.





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