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3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-561-C5-564
DOI: 10.1051/jphyscol:19875121
UNIAXIAL IN-PLANE STRESS DEPENDENCE OF OPTICAL TRANSITIONS IN GaAs-GaAlAs QUANTUM WELLS
G. PLATERO1, 2 et M. ALTARELLI1, 21 Max-Planck-Institut für Festkörperforschung, Hochfeld- Magnetlabor, 166X, F-38042 Grenoble Cedex, France
2 Instituto de Cienca de Materiales (CSIC), Universidad Autonoma, Cantoblanco, E-Madrid 28049, Spain
Résumé
L'énergie des transitions optiques dans des puits quantiques de GaAs-GaAlAs sous contrainte uniaxiale est calculée par la méthode de la fonction enveloppe. Les résultats sont en bon accord avec des expériences récentes de photoluminescence.
Abstract
Optical transition energies in GaAs-GaAlAs quantum wells under uniaxial stress are computed in the envelope-function approximation. Results are in good agreement with recent photoluminescence experiments.
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