Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-153-C6-153
DOI: 10.1051/jphyscol:1989613
HIGH SPATIAL RESOLUTION ELECTRON BEAM INDUCED CURRENT
J.-L. MAURICECNRS, Laboratoire de Physique des Matériaux, F-92195 Meudon, France
Abstract
Spatial resolution δR, of the Electron Beam Induced Current (EBIC) contrast can be defined as the width at half maximum of the contrast profile accross a defect. It depends mainly on beam spreading, but in the case of grain boundaries (GBs), it is also very dependent on the minority carrier diffusion length L. In silicon with L = 100 µm for instance δR = 40 µm at 30 kV [l], value far too large to establish correlations with microstructure.