EDP Sciences Journals List
Issue J. Phys. Colloques
Volume 49, Number C4, Septembre 1988
ESSDERC 88
18th European Solid State Device Research Conference
Page(s) C4-89 - C4-92
DOI http://dx.doi.org/10.1051/jphyscol:1988418

ESSDERC 88
18th European Solid State Device Research Conference

J. Phys. Colloques 49 (1988) C4-89-C4-92

DOI: 10.1051/jphyscol:1988418

HIGH-SPEED OPTICAL DETECTION UP TO 2.5Gbit/s WITH A DOUBLE POLYSILICON SELF-ALIGNED SILICON BIPOLAR TRANSISTOR

W. BOCK1, L. TREITINGER1 et W. PRETTL2

1  Siemens AG, Zentrale Forschung und Entwicklung, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
2  Institut für Angewandte Physik, Universitat Regensburg, D-8400 Regensburg, F.R.G.


Abstract
The photo response of a standard high-speed self-aligned silicon bipolar transistor has been investigated. The photosignal of the base-collector diode is found to consist of at least two current components. Optical detection capabilities are demonstrated by excitation with modulated laser light at 830 nm wavelength up to data rates of 2.5Gbit/s.