18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-79-C4-82
COOL PLASMA ACTIVATED SURFACE IN SILICON WAFER DIRECT BONDING TECHNOLOGYG.-L. SUN, J. ZHAN, Q.-Y. TONG, S.-J. XIE, Y.-M. CAI et S.-J. LU
Microelectronics Center, Nanjing Institute of Technology, Nanjing 210018, China
A novel cool plasma surface activation method has been developed for high quality SOI/SDB (Silicon wafer Direct Bonding) preparation. The activation effectiveness of different plasma gases, espetially of O2 plsma gases were investigated. The measurements of H.V-PMOS and L.V.-NMOS devices made on the SOI/SDB and on a bulk Silicon indicate that ratios of electron and hole mobility of SOI to those of bulk Silicon are 0.92 and 0.88, respectively. It was proved that our SOI substrate produced by SDB is of device level quality.