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3rd International Conference on Modulated Semiconductor Structures

J. Phys. Colloques 48 (1987) C5-13-C5-19
DOI: 10.1051/jphyscol:1987502

CHEMICAL BEAM EPITAXY OF III-V SEMICONDUCTOR HETEROSTRUCTURES

W.T. TSANG

AT and T Bell Laboratories, Holmdel, NJ 07733, U.S.A.


Abstract
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and organometallic chemical vapor deposition (OMCVD). This paper briefly reviews some of the recent progress in the prepartion of Ga0.47In0.53As/InP and GaInAsP/InP heterostructures including quantum wells and superlattices, and their device applications.