33rd International Field Emission Symposium / 33ème Symposium International d'Emission de Champ
J. Phys. Colloques 47 (1986) C7-59-C7-64
DOI: 10.1051/jphyscol:1986711
FIELD ION MICROSCOPY OF THE II-VI-SEMICONDUCTORS ZnO AND CdSe
D. HOFFMANN1, W. DRACHSEL1, J.H. BLOCK1 et A. STEPANOVA21 Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-1000 Berlin 33, F.R.G.
2 On leave from the Institut of Crystallography of Academy of Sciences of the USSR, Moscow, USSR
Abstract
ZnO- and CdSe-field ion images with ordered structures are obtained for the two orientations /0001/ and /000[MATH]/ using argon as imaging gas. The images show the polar faces (0001) and (000[MATH]) respectively, and for the /0001/-oriented CdSe the prism faces. The obtained contrast between the images of the/0001/- and the /000[MATH]/-orientation is very strong for CdSe. Measurements of the field evaporation rate as a function of the tip voltage are indicating that the charge transfer model is relevant. The increase of evaporation rate due to the reactive hydrogen gas, which is added to the inert imaging gas argon, may be interpreted as argument for hydrogen interaction.